CM1771
SPECIFICATIONS
Table 2. OPERATING CONDITIONS
Parameter
Operating Temperature Range
Storage Temperature Range
Table 3. E LECTRICAL          OPERATING CHARACTERISTICS
Rating
? 40 to +150
? 55 to +150
Units
° C
° C
Symbol
I LEAK
V BD
V ESD
Parameter
Leakage Current
Breakdown Voltage on Signal Node
Positive polarity on Signal Node
Negative polarity on Signal Node
ESD Voltage Rating
Contact Discharge per Human Body Model,
MIL ? STD ? 883 (Method 3015)
Contact Discharge per IEC61000 ? 4 ? 2 Standard
Conditions
V = +85 V, T A = 25 ° C
T A = 25 ° C
at 1.0 mA (I CL+ )
at ? 1.0 mA (I CL ? )
(Notes 1 and 2)
Min
+90
? 80
± 6
± 3
Typ
+100
Max
1.0
+110
? 60
Units
m A
V
kV
1. Per the standard, 3 positive and 3 negative strikes are applied, one second apart.
2. V ESD is the ESD capability for the protection device only.
MECHANICAL DETAILS
Table 4. MECHANICAL SPECIFICATIONS (Note 1)
SAWN DIE DIAGRAM
Parameter
Composition
Die Shape
Length (Sawn)
Width (Sawn)
BG Thickness
Top Pad Length (a)
Top Pad Width (b)
Top Pads Spacing
Top Pad Composition
Top Pad Thickness
Back Metal (Underside)
Condition
Silicon Wafer,
P+ doped
Rectangular
480 ± 10
440 ± 10
6
356
117
103
Au (Gold)
3
None (silicon
Substrate)
Unit
m m
m m
mils
m m
m m
m m
m m
1. Dimensions are typical values if tolerances are not specified.
http://onsemi.com
2
Package Dimensions
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